用于s波段应用的高功率处理GaN开关

2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-01 DOI:10.1109/INMMIC.2017.7927296

G. Polli, M. Palomba, S. Colangeli, M. Vittori, E. Limiti

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引用次数: 3

摘要

本文提出了一种适用于trm的非对称开关结构。给出了设计步骤和测试电路。该开关在0.1 dB功率压缩水平下具有48.8 dBm的输入功率处理，并且在Rx和tx模式下的插入损耗均小于0.6 dB。

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High power-handling GaN switch for S-band applications

An asymmetrical switch architecture suitable for TRMs is proposed in this contribution. The design procedure and a test circuit are provided. The switch exhibits a 48.8 dBm input power-handling at a 0.1 dB power compression level and features an insertion loss less than 0.6 dB both in Rx- and Tx-mode.

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来源期刊

2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)

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