新型横向700V DMOS集成:超低85 mΩ·cm2导通电阻，750V LFCC

2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI:10.1109/ISPSD.2012.6229054

Sunglyong Kim, Jongjib Kim, H. Prosack

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引用次数: 23

摘要

介绍了一种能够突破硅极限的新器件概念。采用沿漂移层的横向沟槽阵列的LFCC (Lateral float - capacitor coupled)结构使得漂移剂量比普通的RESURF结构高，击穿电压高。三维电容耦合使漂移区域上的电场呈梯形，从而产生较高的击穿电压和较短的漂移长度。实验结果表明，在750V击穿电压下，比容为85 mΩ·cm2。

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Novel lateral 700V DMOS for integration: Ultra-low 85 mΩ ·cm2 on-resistance, 750V LFCC

A new device concept which is able to break through the silicon limit has been introduced. LFCC (Lateral Floating-Capacitor-Coupled) structure with lateral trench array along drift layer makes drift dose higher than normal RESURF structure with high breakdown voltage. Three dimensional capacitive coupling helps electric field over drift region obtain trapezoidal shape which results in high breakdown voltage with relatively short drift length. Experimental results showed 85 mΩ·cm2 of specific Ron with 750V of breakdown voltage.

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2012 24th International Symposium on Power Semiconductor Devices and ICs

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