用于低温应用的无帽高PSR和低输出噪声低差稳压器

Lingyun Liu, Chenglong Liang, Zhuoqi Guo, Zhongming Xue, Li Geng
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引用次数: 0

摘要

低压降(LDO)稳压器对于低温环境下的噪声敏感电路系统至关重要。本文在低温下对180nm基于bsim4的MOSFET进行了表征和建模。然后,采用级联和前馈电流技术实现了高PSR低输出噪声无帽LDO,用于低温应用。在77K时,仿真结果表明,10kHz时的PSR为-98dB, 100kHz时的PSR为-78dB,在100Hz至100kHz范围内的综合噪声为0.82µVrms。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Cap-Less High PSR and Low Output Noise Low-Dropout Regulator for Cryogenic Applications
Low dropout (LDO) voltage regulators are essential for noise-sensitive circuit systems in cryogenic temperature environments. This paper characterized and modeled a full-scale BSIM4-based 180nm MOSFET at cryogenic temperature. Then, a high PSR low output noise cap-less LDO is implemented with the cascade and feed-forward current technology for cryogenic applications. At 77K, simulation results show that PSR is -98dB at 10kHz and -78dB at 100kHz, and the integrated noise is 0.82 µVrms among the frequency from 100Hz to 100kHz.
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