发散场中的电致发光

Y. Cao, S. Boggs
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引用次数: 3

摘要

具有高迁移率的载流子只能在微观尺度的介质中进行研究,因为对于宏观几何结构,功率耗散会导致热失控。作为保护针电极系统直接“电荷注入”测量的补充,监测了半导体针的电致发光,以研究介电体中,特别是界面处的空间电荷形成和动力学。在双极激发下,由于每半周期交替进行双极注入,因此在实验误差范围内,发光阈值与用保护针确定的电荷注入阈值相同。在半整流交流条件下,在达到交流条件阈值电压的两倍之前,几乎没有光发出。实验结果可以通过单极脉冲发射过程中的极性反转来解释,这与有限元模拟结果一致。该研究也有助于电致发光模型的区分。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electroluminescence in divergent field
Charge carriers with high mobility can only be studied in dielectrics within microscopic dimensions, since the power dissipation would cause thermal runaway for a macroscopic geometry. As a complement to the direct "charge injection" measurement with a guarded needle electrode system, electroluminescence from a semicon needle was monitored to study the space charge formation and dynamics in dielectrics, especially at the interface. Under bipolar excitation, the threshold for luminescence is the same within experimental error as the charge injection threshold determined using a guarded needle because of the alternative bipolar injection in each half cycle. Under half rectified ac condition, almost no light is emitted before twice the threshold voltage for ac condition is reached. The experimental results can be explained through the polarity reversal during the unipolar pulse shot, which is in accordance with the Finite Element Method simulation. This study is also useful for electroluminescence model differentiation.
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