250V容限电路的堆叠式BSCR ESD保护

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239937

V. Vashchenko, A. Concannon, M. ter Beek, P. Hopper

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引用次数: 5

摘要

报道了一种用于高电压应用的片上ESD保护的器件级解决方案。利用CAD技术，提出了一种新的堆叠双极触发可控硅器件结构，并通过250 V互补BJT工艺的实验测量进一步验证了该结构。

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Stacked BSCR ESD protection for 250V tolerant circuits

A device level solution for on-chip ESD protection for high-voltage applications is reported. Using technology CAD, a new stacked bipolar-triggered SCR device architecture is proposed and further validated by experimental measurements in a 250 V complementary BJT process.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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