浸渍阴极单元应用于多束速调管的关键技术研究

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI:10.1109/IVESC.2004.1414267

Y. Shiji, Ding Yaogen, Jiang Zhen-bai, D. Feng, Wang Caiying

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引用次数: 1

摘要

多束速调管(MBK)由于其独特的优点，在近20年来得到了迅速的发展。高电子发射密度浸渍阴极单元是制造多束速调管的关键技术之一。本文在制备MBK阴极单元的过程中进行了一些实验。并介绍了浸渍阴极装置的制造工艺。应用于MBK的ICUs取得了良好的效果，不仅发射密度满足器件要求，而且克服了电子枪击穿的问题，最终提高了MBK的可靠性。

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Key skill study of impregnated cathode unit applied in multiple beam klystron

Multiple beam klystron (MBK) was rapidly developed in recent 20 years because of its unique excellence. Impregnated cathode unit (ICU) with high electronic emission density is one of key technology for manufacture of multi-beam klystron. In this paper, some experiment was made in process of preparing MBK cathode unit. Also several skills were applied to make impregnated cathode unit. The ICUs used in MBK had achieved good result, not only the emission density was satisfied with the demand of device, the problem of electron gun breakdown was overcome also, and the reliability of MBK was improved finally.

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IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)

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