半导体纳米物体色散系综物理特性模拟与多元统计分析的最新进展

O. Voskoboynikov
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引用次数: 0

摘要

近年来,对具有复杂几何形状、材料组成和空间分布的半导体纳米物体色散系综物理响应的一般理论描述得到了发展。本文综述了近年来对ZnTe/CdSe核/壳量子点色散系综的吸收截面、三同心GaAs/AlGaAs纳米环系综的光学特性以及摆动InAs/GaAs量子环系综的抗磁响应的模拟结果。我们模拟的实际响应与实验数据吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Recent development in simulation and multivariate statistical analysis of physical characteristics of dispersive ensembles of semiconductor nano-sized objects: A brief review
A general theoretical description of the physical response of dispersive ensembles of semiconductor nano-sized objects of complex geometries, material compositions, and spatial distributions has been developed recently. We present a brief review on some recent results of our simulation of the absorption cross section of dispersive ensembles of ZnTe/CdSe core/shell quantum dots, optical characteristics of ensembles of triple concentric GaAs/AlGaAs nano-rings, and diamagnetic response of ensembles of wobbled InAs/GaAs quantum rings. Simulated by us the actual responses are in a good agreement with experimental data.
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