具有高密度图案化ZnO纳米线发射体和栅极下结构的可寻址场发射体阵列

2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI:10.1109/ivnc49440.2020.9203549

Xuqi Wang, Libin Wang, Xinpeng Bai, J. She, S. Deng, Jun Chen

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引用次数: 0

摘要

可寻址ZnO纳米线场射极阵列在真空微电子器件中具有潜在的应用前景。本研究采用微细加工工艺，设计并成功制备了门下结构ZnO纳米线场发射极阵列。在每个像素上使用高密度的ZnO纳米线，减小了屏幕效应，增加了发射电流。实现了栅极电压对场发射电流的调制。

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Addressable field emitter arrays with high density patterned ZnO nanowire emitters and under-gate structure

Addressable ZnO nanowire field emitter arrays have potential application in vacuum microelectronic devices. In this study, an under-gate structure ZnO nanowire field emitter arrays were designed and successfully fabricated using microfabrication process. High density patterned ZnO nanowires were used in each pixel to minimized the screen effect and increase the emission current. Modulation of field emission current by the gate voltage was achieved.

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2020 33rd International Vacuum Nanoelectronics Conference (IVNC)

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