{"title":"基于临界现象的二氧化钒光学双稳性","authors":"R. S. Rana, D. Nolte, F. A. Chudnovskiǐ","doi":"10.1364/nlo.1992.md5","DOIUrl":null,"url":null,"abstract":"The characteristics of nonlinear thin film etalons and interference filters are being studied because of their potential use as optical logical elements1. Low-power optical bistability in thin film nonlinear interference filters has been demonstrated at room temperature using zinc sulphide (ZnS) and zinc selenide2 (ZnSe). These bistable devices rely on electronic nonlinearities to operate. A switching power of 5 mW and switching speeds of 1 ms - 10 μs are typical for these devices.","PeriodicalId":219832,"journal":{"name":"Nonlinear Optics: Materials, Fundamentals, and Applications","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Critical Phenomenon-Based Optical Bistability in Vanadium Dioxide\",\"authors\":\"R. S. Rana, D. Nolte, F. A. Chudnovskiǐ\",\"doi\":\"10.1364/nlo.1992.md5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The characteristics of nonlinear thin film etalons and interference filters are being studied because of their potential use as optical logical elements1. Low-power optical bistability in thin film nonlinear interference filters has been demonstrated at room temperature using zinc sulphide (ZnS) and zinc selenide2 (ZnSe). These bistable devices rely on electronic nonlinearities to operate. A switching power of 5 mW and switching speeds of 1 ms - 10 μs are typical for these devices.\",\"PeriodicalId\":219832,\"journal\":{\"name\":\"Nonlinear Optics: Materials, Fundamentals, and Applications\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nonlinear Optics: Materials, Fundamentals, and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/nlo.1992.md5\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nonlinear Optics: Materials, Fundamentals, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/nlo.1992.md5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Critical Phenomenon-Based Optical Bistability in Vanadium Dioxide
The characteristics of nonlinear thin film etalons and interference filters are being studied because of their potential use as optical logical elements1. Low-power optical bistability in thin film nonlinear interference filters has been demonstrated at room temperature using zinc sulphide (ZnS) and zinc selenide2 (ZnSe). These bistable devices rely on electronic nonlinearities to operate. A switching power of 5 mW and switching speeds of 1 ms - 10 μs are typical for these devices.