J. A. Casao, P. Dorta, J. L. Cáceres, M. Salazar-Palma, J. Perez
{"title":"用于低噪声和高速光通信的增强型砷化镓单片通阻放大器","authors":"J. A. Casao, P. Dorta, J. L. Cáceres, M. Salazar-Palma, J. Perez","doi":"10.1109/MWSYM.1992.187913","DOIUrl":null,"url":null,"abstract":"The design, implementation and test results of a simple GaAs monolithic transimpedance amplifier with enhanced performance for high-speed optical communications are described. A cascode configuration, improved in terms of bandwidth and noise, is used. On-wafer and on-carrier measurements show close agreement with simulated behavior. Excellent performance with high transimpedance gain, a bandwidth from DC to 1.6 GHz, low noise, and low power consumption is obtained. The temperature and bias point sensitivity is negligible. This last item turns out to be a major commercial achievement.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"An enhanced GaAs monolithic transimpedance amplifier for low noise and high speed optical communications\",\"authors\":\"J. A. Casao, P. Dorta, J. L. Cáceres, M. Salazar-Palma, J. Perez\",\"doi\":\"10.1109/MWSYM.1992.187913\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design, implementation and test results of a simple GaAs monolithic transimpedance amplifier with enhanced performance for high-speed optical communications are described. A cascode configuration, improved in terms of bandwidth and noise, is used. On-wafer and on-carrier measurements show close agreement with simulated behavior. Excellent performance with high transimpedance gain, a bandwidth from DC to 1.6 GHz, low noise, and low power consumption is obtained. The temperature and bias point sensitivity is negligible. This last item turns out to be a major commercial achievement.<<ETX>>\",\"PeriodicalId\":165665,\"journal\":{\"name\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1992.187913\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.187913","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An enhanced GaAs monolithic transimpedance amplifier for low noise and high speed optical communications
The design, implementation and test results of a simple GaAs monolithic transimpedance amplifier with enhanced performance for high-speed optical communications are described. A cascode configuration, improved in terms of bandwidth and noise, is used. On-wafer and on-carrier measurements show close agreement with simulated behavior. Excellent performance with high transimpedance gain, a bandwidth from DC to 1.6 GHz, low noise, and low power consumption is obtained. The temperature and bias point sensitivity is negligible. This last item turns out to be a major commercial achievement.<>
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