一个全片上,单端s波段图像抑制混频器的高动态范围应用

J. Lai, C. Christodoulou
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引用次数: 2

摘要

采用GaAs pHEMT技术,演示了具有高截距点和完全集成的单端端口(包括UHF输出)的s波段图像抑制下转换混频器。在400 MHz到1 GHz以上的宽中频带宽范围内,图像抑制优于20 dB,输入IP3为20 dBm。片上无源平衡器用于提供电阻式FET混频器核心所需的RF和IF路径中的单端到差分转换。多相滤波器用于产生正交本振(LO)元件,而集成的UHF集总元正交混合电路将中频(IF)元件组合在一起,完全在片上实现图像抑制,而无需外部元件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Fully On-Chip, Single-Ended S-Band Image Reject Mixer for High Dynamic Range Applications
An S-band image reject downconversion mixer with high intercept point and fully integrated single-ended ports, including a UHF output, is demonstrated using GaAs pHEMT technology. The image rejection is better than 20 dB across a wide IF bandwidth ranging from 400 MHz to beyond 1 GHz with a high input IP3 of 20 dBm. On-chip passive baluns are used to provide the single-ended to differential conversion in the RF and IF paths necessary for the resistive FET mixer core. A polyphase filter is used to generate the quadrature local oscillator (LO) components, while an integrated UHF lumped element quadrature hybrid combines the intermediate frequency (IF) components to achieve image rejection fully on-chip without the need for external components.
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