化学沉积SnS薄膜在太阳能电池中的应用分析

Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT) Pub Date : 2015-03-16 DOI:10.1109/C3IT.2015.7060192

Arindam Basak, Saswat Mishra, U. Singh, A. Mondai

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引用次数: 2

摘要

与其他半导体材料相比，SnS具有成本低、易得、毒性小等优点，是一种很有前途的太阳能电池吸收层材料。采用化学浴沉积法(CBD)在含有SnCl2.2H2O、TEA、TA和NH3OH的溶液中沉积了厚度为550 nm的用作光伏应用吸收层的SnS薄膜。用x射线衍射和扫描电子显微镜检查了沉积膜的表面形貌。利用紫外可见分光光度计和霍尔效应测量系统分别对沉积膜的光学和电学性能进行了表征。结果表明，该工艺沉积的薄膜具有非晶晶结构，对衬底具有良好的附着力。所得带隙为1.4eV，非常适合作为薄膜太阳能电池的吸收材料。

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Analysis of chemically deposited SnS thin film for solar cell application

SnS is a promising material for solar cell absorber layer application due to its low cost, easy availability and less toxicity than other semiconductor material used for the same purpose. SnS thin films as an absorber layer for photovoltaic application are deposited using chemical bath deposition (CBD) having a thickness of 550 nm from a solution containing SnCl2.2H2O, TEA, TA and NH3OH NH3OH is used to control the pH of the solution which is maintained at 5. The surface morphology of the deposited film has been examined using X-Ray diffraction and scanning electron microscopy. The optical as well as electrical properties of deposited film have been characterized using UV-Vis spectrophotometer and hall effect measurement system respectively. Results show that films deposited in this process have amorphous crystal structure and have good adherence to the substrate. The bandgap obtained is 1.4eV which is very suitable for its use as absorber material for thin film solar cell.

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Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT)

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