{"title":"数字有源栅极驱动DC-DC变换器抑制开关浪涌电压的研究","authors":"Shuhei Fukunaga, Hajime Takayama, T. Hikihara","doi":"10.23919/IPEC-Himeji2022-ECCE53331.2022.9806952","DOIUrl":null,"url":null,"abstract":"High-speed switching of SiC unipolar power semiconductor devices induces an anomalous switching surge voltage in the switching operation of power conversion systems. An active gate driving can control the voltage/current behaviors of the power semiconductor device. It expects to suppress the switching surge voltage. We have focused on a fully digitalized active gate driver. In this paper, the digital active gate driver is applied to a SiC MOSFET in a boost DC-DC converter to improve its switching operation. The experimental results revealed that the driver successfully suppressed the switching surge voltage of SiC MOSFET in the converter.","PeriodicalId":256507,"journal":{"name":"2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Study on Digital Active Gate Driving of DC-DC Converter for Suppressing Switching Surge Voltage\",\"authors\":\"Shuhei Fukunaga, Hajime Takayama, T. Hikihara\",\"doi\":\"10.23919/IPEC-Himeji2022-ECCE53331.2022.9806952\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-speed switching of SiC unipolar power semiconductor devices induces an anomalous switching surge voltage in the switching operation of power conversion systems. An active gate driving can control the voltage/current behaviors of the power semiconductor device. It expects to suppress the switching surge voltage. We have focused on a fully digitalized active gate driver. In this paper, the digital active gate driver is applied to a SiC MOSFET in a boost DC-DC converter to improve its switching operation. The experimental results revealed that the driver successfully suppressed the switching surge voltage of SiC MOSFET in the converter.\",\"PeriodicalId\":256507,\"journal\":{\"name\":\"2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)\",\"volume\":\"97 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/IPEC-Himeji2022-ECCE53331.2022.9806952\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IPEC-Himeji2022-ECCE53331.2022.9806952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Study on Digital Active Gate Driving of DC-DC Converter for Suppressing Switching Surge Voltage
High-speed switching of SiC unipolar power semiconductor devices induces an anomalous switching surge voltage in the switching operation of power conversion systems. An active gate driving can control the voltage/current behaviors of the power semiconductor device. It expects to suppress the switching surge voltage. We have focused on a fully digitalized active gate driver. In this paper, the digital active gate driver is applied to a SiC MOSFET in a boost DC-DC converter to improve its switching operation. The experimental results revealed that the driver successfully suppressed the switching surge voltage of SiC MOSFET in the converter.
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