纳米级GCGS VSG MOSFET的精确阈值电压模型

2009 3rd International Conference on Signals, Circuits and Systems (SCS) Pub Date : 2009-11-01 DOI:10.1109/ICSCS.2009.5412459

N. Abdelmalek, F. Djeffal, M. Abdi, D. Arar

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引用次数: 0

摘要

本文提出了一种基于表面电位的精确解析阈值电压模型，用于研究纳米级梯度栅极堆叠垂直环绕栅极(GCGS - VSG MOSFET)的标度性能。建立了表面电位和阈值电压随器件参数的近似显式关系。该模型与数值模拟结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An accurate threshold voltage model for nanoscale GCGS VSG MOSFET

in this paper, an accurate analytical threshold voltage model based on terms of surface potential is presented to study the scaling capability of nanoscale graded channel gate stack vertical surrounding gate (GCGS VSG MOSFET). Explicit approximate relations of surface potential and threshold voltage as function of device parameters are developed. The developed model is verified by its good agreement with the numerical simulations.

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2009 3rd International Conference on Signals, Circuits and Systems (SCS)

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