基于Simplex-PSO算法的栅极堆叠双栅极MOSFET电参数优化

2019 Devices for Integrated Circuit (DevIC) Pub Date : 2019-03-01 DOI:10.1109/DEVIC.2019.8783730

Dibyendu Chowdhury, B. P. De, K. B. Maji, Sumalya Ghosh, R. Kar, D. Mandal

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引用次数: 3

摘要

本文利用Simplex-Particle Swarm Optimization (Simplex-PSO)算法对栅极堆叠双栅(GSDG) MOSFET的电学参数进行了优化。考虑了断开状态电流、跨导和亚阈值摆幅等电气参数来制定总体成本函数(CF)。总体CF采用加权和法实现。Simplex-PSO的结果优于以往的文献。

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Optimization of Electrical Parameters for the Gate Stack Double Gate (GSDG) MOSFET using Simplex-PSO Algorithm

In this article, the electrical parameters of the Gate Stack Double Gate (GSDG) MOSFET are optimized utilizing the Simplex-Particle Swarm Optimization (Simplex-PSO) algorithm. The electrical parameters like the OFF-state current, transconductance and subthreshold swing have been considered to formulate the overall Cost Function (CF). The overall CF is achieved by the weighted sum approach method. The results attained from the Simplex-PSO are formed to be better than the previous literature.

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来源期刊

2019 Devices for Integrated Circuit (DevIC)

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