高性能低功耗易失性STT-RAM的刷新感知循环调度

Keni Qiu, Junpeng Luo, Zhiyao Gong, Wei-gong Zhang, Jing Wang, Yuanchao Xu, Tao Li, C. Xue
{"title":"高性能低功耗易失性STT-RAM的刷新感知循环调度","authors":"Keni Qiu, Junpeng Luo, Zhiyao Gong, Wei-gong Zhang, Jing Wang, Yuanchao Xu, Tao Li, C. Xue","doi":"10.1109/ICCD.2016.7753282","DOIUrl":null,"url":null,"abstract":"The highlighted advantages of low leakage power, high storage density and immunity to electronic magnetic radiation make STT-RAM a promising candidate to build cache, SPM or main memory in embedded systems. However, write operations on STT-RAM have considerably longer latency and higher energy consumption than conventional SRAM. To solve this problem, researchers have proposed to relax STT-RAM's non-volatility and to have it work in a fast and low power mode. Under this volatile mode, refresh operations are needed to guarantee data correctness if their lifespan is larger than the retention time. It is observed that this refresh overhead is significant for data in stencil loops with the characteristic of constant read and write dependencies. This paper proposes a loop scheduling technique which can traverse loops in a new direction such that data lifespan can be greatly shortened. Therefore, overall refresh overhead can be efficiently mitigated so as to improve performance and reduce power consumption. The experimental results indicate that access latency and dynamic energy can be improved by 21.4~96.0% and 22.0~95.5% respectively by the proposed scheduling scheme.","PeriodicalId":297899,"journal":{"name":"2016 IEEE 34th International Conference on Computer Design (ICCD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Refresh-aware loop scheduling for high performance low power volatile STT-RAM\",\"authors\":\"Keni Qiu, Junpeng Luo, Zhiyao Gong, Wei-gong Zhang, Jing Wang, Yuanchao Xu, Tao Li, C. Xue\",\"doi\":\"10.1109/ICCD.2016.7753282\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The highlighted advantages of low leakage power, high storage density and immunity to electronic magnetic radiation make STT-RAM a promising candidate to build cache, SPM or main memory in embedded systems. However, write operations on STT-RAM have considerably longer latency and higher energy consumption than conventional SRAM. To solve this problem, researchers have proposed to relax STT-RAM's non-volatility and to have it work in a fast and low power mode. Under this volatile mode, refresh operations are needed to guarantee data correctness if their lifespan is larger than the retention time. It is observed that this refresh overhead is significant for data in stencil loops with the characteristic of constant read and write dependencies. This paper proposes a loop scheduling technique which can traverse loops in a new direction such that data lifespan can be greatly shortened. Therefore, overall refresh overhead can be efficiently mitigated so as to improve performance and reduce power consumption. The experimental results indicate that access latency and dynamic energy can be improved by 21.4~96.0% and 22.0~95.5% respectively by the proposed scheduling scheme.\",\"PeriodicalId\":297899,\"journal\":{\"name\":\"2016 IEEE 34th International Conference on Computer Design (ICCD)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 34th International Conference on Computer Design (ICCD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCD.2016.7753282\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 34th International Conference on Computer Design (ICCD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCD.2016.7753282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

摘要

STT-RAM具有低泄漏功率、高存储密度和抗电磁辐射等优点,是嵌入式系统中构建高速缓存、SPM或主存的理想选择。然而,与传统的SRAM相比,STT-RAM上的写操作具有相当长的延迟和更高的能耗。为了解决这个问题,研究人员提出放宽STT-RAM的非易失性,使其在快速低功耗模式下工作。在这种易失模式下,如果数据的生命周期大于保留时间,则需要进行刷新操作来保证数据的正确性。可以观察到,这种刷新开销对于具有恒定读写依赖特性的模板循环中的数据非常重要。本文提出了一种循环调度技术,它可以沿着一个新的方向遍历循环,从而大大缩短数据的寿命。因此,可以有效地减轻总体刷新开销,从而提高性能并降低功耗。实验结果表明,该调度方案可将接入时延和动态能量分别提高21.4~96.0%和22.0~95.5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Refresh-aware loop scheduling for high performance low power volatile STT-RAM
The highlighted advantages of low leakage power, high storage density and immunity to electronic magnetic radiation make STT-RAM a promising candidate to build cache, SPM or main memory in embedded systems. However, write operations on STT-RAM have considerably longer latency and higher energy consumption than conventional SRAM. To solve this problem, researchers have proposed to relax STT-RAM's non-volatility and to have it work in a fast and low power mode. Under this volatile mode, refresh operations are needed to guarantee data correctness if their lifespan is larger than the retention time. It is observed that this refresh overhead is significant for data in stencil loops with the characteristic of constant read and write dependencies. This paper proposes a loop scheduling technique which can traverse loops in a new direction such that data lifespan can be greatly shortened. Therefore, overall refresh overhead can be efficiently mitigated so as to improve performance and reduce power consumption. The experimental results indicate that access latency and dynamic energy can be improved by 21.4~96.0% and 22.0~95.5% respectively by the proposed scheduling scheme.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信