先进封装互连用薄膜材料的微波特性研究

B. Fléchet, R. Salik, J. W. Tao, G. Angénieux
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引用次数: 5

摘要

由新型有机或无机材料制成的低介电常数绝缘层与导电层相结合,厚度小于1微米,越来越多地用于微波或高速电路的互连和电子封装。利用基于改进的横向共振技术的严格全波方法,在1 GHz和40 GHz之间对这种薄膜微带线进行了建模。通过对理论和实验传播常数的比较,我们可以通过迭代优化技术提取绝缘体的原位复介电常数和导体的电导率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microwave characterization of thin film materials for interconnections of advanced packaging
Low permittivity insulator layers made of new organic or inorganic materials, associated to conductive layers, with thickness less than one micrometer are used more and more to develop interconnections of microwave or high speed circuits, and electronic packaging. Such thin film microstrip lines have been modeled between 1 GHz and 40 GHz using a rigorous full-wave method based on a modified transverse resonance technique. Comparison between theoretical and experimental propagation constants enables us to extract the in-situ complex permittivity of insulators and the electrical conductivity of conductors by an iterative optimization technique.
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