250nm InP DHBT中超过220 ghz带宽的分布式有源功率合成器

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI:10.1109/BCICTS48439.2020.9392961

Teruo Jyo, M. Nagatani, M. Ida, M. Mutoh, H. Wakita, Naoki Terao, H. Nosaka

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引用次数: 2

摘要

采用250 nm磷化铟(InP)双异质结双极晶体管(DHBT)技术，设计并制作了分布式有源功率组合器(DAPC)。提出了一种采用两个分离的分布式放大器和一个分布式电阻合成器(DRC)的新型DAPC结构，以延长带宽并减少输入串扰。所制备的DAPC增益为5db，带宽超过220 GHz，输入串扰小于- 32 dB，高达67 GHz。

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An over 220-GHz-Bandwidth Distributed Active Power Combiner in 250-nm InP DHBT

A distributed active power combiner (DAPC) was designed and fabricated in 250-nm indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. A new DAPC configuration by using two separated distributed amplifiers with a distributed resistive combiner (DRC) is proposed to extend the bandwidth and reduce input crosstalk. The fabricated DAPC achieved a gain of 5 dB with a bandwidth of over 220 GHz, and an input crosstalk of less than −32 dB up to 67 GHz.

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2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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