用AAO模板生长Cu/sub /S纳米线阵列的气固反应

IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479) Pub Date : 2003-08-26 DOI:10.1109/IVMC.2003.1223051

Q.B. Wu, S. Ren, S. Deng, Jun Chen, N. Xu

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引用次数: 0

摘要

本文详细介绍了以阳极氧化铝(AAO)为模板，采用气固反应生长Cu/sub /S纳米线阵列的实验研究。结果表明，该模板具有良好的对准性，在控制生长中发挥了重要作用。纳米线阵列具有相似的直径(约100 nm)和高度(约1 /spl mu/ m)，并测量了它们的电子场发射特性。分别观察到2.2 MV/m的导通场和8 MV/m的阈值场。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The growth of aligned Cu/sub 2/S nanowire arrays with AAO template by gas-solid reaction

The details are given of an experimental study of the growth process of aligned Cu/sub 2/S nanowire arrays with anodic aluminum oxide (AAO) template by a gas-solid reaction. It was found that the template played an important role in the control growth with good alignment. The nanowire arrays had similar diameter (about 100 nm) and height (about 1 /spl mu/ m). Their electron field emission property was also measured. A turn-on field of 2.2 MV/m and a threshold-field of 8 MV/m were observed, respectively.

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IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479)

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