Wideband CMOS high-Q 2-port active inductor using parallel LC resonance Circuit

This paper presents a novel 2-port high-Q active inductor using LC parallel resonator. The proposed 2-port high-Q active inductor consists of the feedback parallel resonance circuits that comprises of low-Q spiral inductor and capacitor. The novelty of the proposed structure can improve its Q-factor due to decrease of the parasitic capacitances and extend high-Q operating frequency range. For an experimental validation, the 2-port active inductor was fabricated wit 65 nm Samsung CMOS technology. The fabricated circuit shows inductance of above 2 nH and Q-factor higher than 35 in the frequency range of 3 ∼ 10 GHz.