{"title":"用于自旋电子存储和逻辑的非易失性磁电场效应晶体管","authors":"P. Dowben, C. Binek, D. Nikonov","doi":"10.1109/VLSI-TSA.2018.8403869","DOIUrl":null,"url":null,"abstract":"Here we describe the development of magneto-electric transistor devices to address the need for non-volatile, ultra-low power, ultra-fast, and scalable memory and logic.","PeriodicalId":209993,"journal":{"name":"2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Nonvolatile magneto-electric field effect transistors for spintronic memory and logic\",\"authors\":\"P. Dowben, C. Binek, D. Nikonov\",\"doi\":\"10.1109/VLSI-TSA.2018.8403869\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Here we describe the development of magneto-electric transistor devices to address the need for non-volatile, ultra-low power, ultra-fast, and scalable memory and logic.\",\"PeriodicalId\":209993,\"journal\":{\"name\":\"2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2018.8403869\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2018.8403869","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nonvolatile magneto-electric field effect transistors for spintronic memory and logic
Here we describe the development of magneto-electric transistor devices to address the need for non-volatile, ultra-low power, ultra-fast, and scalable memory and logic.