一种新型低压开关负载CMOS有源混频器

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI:10.1109/RFIT.2005.1598903

Shen Dan

{"title":"一种新型低压开关负载CMOS有源混频器","authors":"Shen Dan","doi":"10.1109/RFIT.2005.1598903","DOIUrl":null,"url":null,"abstract":"A novel CMOS active mixer topology that can operate at low voltages (e.g. 1 v) is presented in this paper. By switching the load on or off other than switching the current, the switches require no voltage headroom. Because the switches are capacitively connected to the load, the switch can operate under full swing allowed by the supply voltage and contribute no thermal noise. The mixer is designed in 0.18 um CMOS technology, and the simulation results at 1 V supply voltage are satisfactory (gain=7 dB, IP3=7 dBm, NF-11 dB).","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A novel low-voltage switched load CMOS active mixer\",\"authors\":\"Shen Dan\",\"doi\":\"10.1109/RFIT.2005.1598903\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel CMOS active mixer topology that can operate at low voltages (e.g. 1 v) is presented in this paper. By switching the load on or off other than switching the current, the switches require no voltage headroom. Because the switches are capacitively connected to the load, the switch can operate under full swing allowed by the supply voltage and contribute no thermal noise. The mixer is designed in 0.18 um CMOS technology, and the simulation results at 1 V supply voltage are satisfactory (gain=7 dB, IP3=7 dBm, NF-11 dB).\",\"PeriodicalId\":337918,\"journal\":{\"name\":\"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2005.1598903\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2005.1598903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文提出了一种新颖的CMOS有源混频器拓扑结构，可以在低电压(例如1 v)下工作。通过打开或关闭负载而不是切换电流，开关不需要电压余量。由于开关电容连接到负载，开关可以在电源电压允许的全摆幅下工作，并且不会产生热噪声。该混频器采用0.18 um CMOS技术设计，在1 V电源电压下仿真结果令人满意(增益=7 dB, IP3=7 dBm, NF-11 dB)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A novel low-voltage switched load CMOS active mixer

A novel CMOS active mixer topology that can operate at low voltages (e.g. 1 v) is presented in this paper. By switching the load on or off other than switching the current, the switches require no voltage headroom. Because the switches are capacitively connected to the load, the switch can operate under full swing allowed by the supply voltage and contribute no thermal noise. The mixer is designed in 0.18 um CMOS technology, and the simulation results at 1 V supply voltage are satisfactory (gain=7 dB, IP3=7 dBm, NF-11 dB).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks

自引率

0.00%

发文量