采用65nm SOTB技术的910nW δ σ调制器，用于物联网应用的混合信号IC

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-01 DOI:10.1109/ICICDT.2017.7993514

K. Ishibashi, Junya Kikuchi, N. Sugii

{"title":"采用65nm SOTB技术的910nW δ σ调制器，用于物联网应用的混合信号IC","authors":"K. Ishibashi, Junya Kikuchi, N. Sugii","doi":"10.1109/ICICDT.2017.7993514","DOIUrl":null,"url":null,"abstract":"A 910nW 46fJ/conv 0.036mm2 delta sigma modulator is demonstrated. The chip was fabricated using 65nm SOTB (Silicon on Thin Buried oxide) technology, in which 13.4pJ/cycle 0.14uA Sleep Current CPU with 15nA VBB generator was obtained, resulting in achieving ultra-low power mixed signal IC for IoT applications.","PeriodicalId":382735,"journal":{"name":"2017 IEEE International Conference on IC Design and Technology (ICICDT)","volume":"20 25-26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 910nW delta sigma modulator using 65nm SOTB technology for mixed signal IC of IoT applications\",\"authors\":\"K. Ishibashi, Junya Kikuchi, N. Sugii\",\"doi\":\"10.1109/ICICDT.2017.7993514\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 910nW 46fJ/conv 0.036mm2 delta sigma modulator is demonstrated. The chip was fabricated using 65nm SOTB (Silicon on Thin Buried oxide) technology, in which 13.4pJ/cycle 0.14uA Sleep Current CPU with 15nA VBB generator was obtained, resulting in achieving ultra-low power mixed signal IC for IoT applications.\",\"PeriodicalId\":382735,\"journal\":{\"name\":\"2017 IEEE International Conference on IC Design and Technology (ICICDT)\",\"volume\":\"20 25-26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE International Conference on IC Design and Technology (ICICDT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2017.7993514\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Conference on IC Design and Technology (ICICDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2017.7993514","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

演示了一种910nW 46fJ/conv 0.036mm2 δ σ调制器。该芯片采用65nm SOTB (Silicon on Thin Buried oxide)工艺制作，获得13.4pJ/cycle 0.14uA休眠电流CPU和15nA VBB发生器，实现了物联网应用的超低功耗混合信号IC。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 910nW delta sigma modulator using 65nm SOTB technology for mixed signal IC of IoT applications

A 910nW 46fJ/conv 0.036mm2 delta sigma modulator is demonstrated. The chip was fabricated using 65nm SOTB (Silicon on Thin Buried oxide) technology, in which 13.4pJ/cycle 0.14uA Sleep Current CPU with 15nA VBB generator was obtained, resulting in achieving ultra-low power mixed signal IC for IoT applications.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 IEEE International Conference on IC Design and Technology (ICICDT)

自引率

0.00%

发文量