{"title":"用于伽马相机的CMOS光电二极管设计","authors":"N. S. Salahuddin, M. Paindavoine","doi":"10.1109/SITIS.2008.66","DOIUrl":null,"url":null,"abstract":"We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The photodiode areas are respectively 1 mm × 1 mm and 0.4 mm × 0.4 mm with fill factor 98% and total chip area is 2 square millimetres. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low blue light (less than 0.5 lux) . These results allow to use our sensor in new gamma camera solid-state concept.","PeriodicalId":202698,"journal":{"name":"2008 IEEE International Conference on Signal Image Technology and Internet Based Systems","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CMOS Photodiode Design for Gamma Camera Application\",\"authors\":\"N. S. Salahuddin, M. Paindavoine\",\"doi\":\"10.1109/SITIS.2008.66\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The photodiode areas are respectively 1 mm × 1 mm and 0.4 mm × 0.4 mm with fill factor 98% and total chip area is 2 square millimetres. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low blue light (less than 0.5 lux) . These results allow to use our sensor in new gamma camera solid-state concept.\",\"PeriodicalId\":202698,\"journal\":{\"name\":\"2008 IEEE International Conference on Signal Image Technology and Internet Based Systems\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Signal Image Technology and Internet Based Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SITIS.2008.66\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Signal Image Technology and Internet Based Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SITIS.2008.66","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
我们设计了新的光电二极管传感器,包括电流镜放大器。这些光电二极管是采用奥地利微系统公司(AMS)的CMOS 0.6微米工艺制造的。光电二极管面积分别为1mm × 1mm和0.4 mm × 0.4 mm,填充系数为98%,总芯片面积为2平方毫米。传感器像素在照明中显示对数响应,并且能够检测非常低的蓝光(小于0.5勒克斯)。这些结果允许将我们的传感器用于新的伽马相机固态概念。
CMOS Photodiode Design for Gamma Camera Application
We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The photodiode areas are respectively 1 mm × 1 mm and 0.4 mm × 0.4 mm with fill factor 98% and total chip area is 2 square millimetres. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low blue light (less than 0.5 lux) . These results allow to use our sensor in new gamma camera solid-state concept.