为非易失性存储器系统设计DDR5 DRAM缓存

Xin Xin, Wanyi Zhu, Li Zhao
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引用次数: 0

摘要

随着英特尔Optane DIMM的发布,非易失性存储器(NVMs)因其更高容量的优势而成为DRAM存储器的可行替代品。然而,更高的延迟和更低的带宽使Optane无法完全取代DRAM。一种流行的策略是使用现有的DRAM作为Optane的数据缓存,从而在容量、带宽和延迟方面获得总体优势。在本文中,我们考察了DDR5的新特性,以更好地支持Optane的DRAM缓存设计。具体来说,我们利用DDR5中的两级ECC方案,即DIMM ECC和片上ECC,构建了一个更窄的标签探测通道,并提出了一种快速缓存替换的新操作。实验结果表明,我们提出的策略可以实现平均26%的性能提升。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Architecting DDR5 DRAM caches for non-volatile memory systems
With the release of Intel's Optane DIMM, Non-Volatile Memories (NVMs) are emerging as viable alternatives to DRAM memories because of the advantage of higher capacity. However, the higher latency and lower bandwidth of Optane prevent it from outright replacing DRAM. A prevailing strategy is to employ existing DRAM as a data cache for Optane, thereby achieving overall benefit in capacity, bandwidth, and latency. In this paper, we inspect new features in DDR5 to better support the DRAM cache design for Optane. Specifically, we leverage the two-level ECC scheme, i.e., DIMM ECC and on-die ECC, in DDR5 to construct a narrower channel for tag probing and propose a new operation for fast cache replacement. Experimental results show that our proposed strategy can achieve, on average, 26% performance improvement.
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