有效自旋轨道转矩的拓扑绝缘体

Yabin Fan
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引用次数: 0

摘要

近十年来,基于拓扑绝缘体的自旋电子学研究取得了长足的进展。由于其强大的自旋-轨道耦合(SOC),特别是表面上的自旋动量锁定狄拉克态,ti有望成为自旋电子应用的非常有前途的材料,从超低功耗存储/逻辑器件到新的超快计算技术。本文综述了ti基自旋电子学的研究进展。特别地,我将回顾在各种ti基磁系统中通过巨大自旋轨道转矩(SOT)进行磁化切换的实验。本文将讨论这些结构中的SOT效率和开关特性。基于ti的结构所表现出的大SOT和高效的电流感应磁化开关可能会导致创新的自旋电子应用,如超低功耗存储/逻辑器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Topological Insulators for Efficient Spin-Orbit Torques
Spintronics research based on topological insulators (TIs) has shown rapid progress during the past decade. Due to the strong spin-orbit coupling (SOC) and particularly the spin-momentum locked Dirac states on the surface, TIs are expected to be very promising materials for spintronic applications ranging from ultralow power memory/logic devices to new ultrafast computation technologies. In this digest, I will review the progress on TI-based spintronics. In particular, I will review the experiments on magnetization switching through giant spin-orbit torques (SOT) in various TI-based magnetic systems. The SOT efficiency and switching features in these structures will be discussed. The large SOT and efficient current-induced magnetization switching exhibited by the TI-based structures may lead to innovative spintronic applications such as ultralow-power dissipation memory/logic devices.
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