A. Villaret, E. Ebrard, N. Casanova, S. Guillaumet, P. Candelier, P. Coronel, J. Schoellkopf, T. Skotnicki
{"title":"用于高密度一次性可编程存储器的W/Ta2O5/TaN MIM电容器","authors":"A. Villaret, E. Ebrard, N. Casanova, S. Guillaumet, P. Candelier, P. Coronel, J. Schoellkopf, T. Skotnicki","doi":"10.1109/ESSDERC.2007.4430920","DOIUrl":null,"url":null,"abstract":"In this paper, we report a study on an alternative one time programmable (OTP) memory cell consisting in an access MOSFET and a capacitor integrated between the contact plug and the first metal line level. Such an OTP should result in a denser cell as compared to the standard polyfuse or antifuse OTPs. The results obtained on these integrated capacitors show good overall electrical performance with breakdown voltage adjustable under 5 V and large sense current margins (about 6 decades). The dispersion, even if quite large in this initial study, proved to be manageable since the capacitor's acceleration factors are high.","PeriodicalId":103959,"journal":{"name":"ESSDERC 2007 - 37th European Solid State Device Research Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"W/Ta2O5/TaN MIM capacitor for high density one time programmable memory\",\"authors\":\"A. Villaret, E. Ebrard, N. Casanova, S. Guillaumet, P. Candelier, P. Coronel, J. Schoellkopf, T. Skotnicki\",\"doi\":\"10.1109/ESSDERC.2007.4430920\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report a study on an alternative one time programmable (OTP) memory cell consisting in an access MOSFET and a capacitor integrated between the contact plug and the first metal line level. Such an OTP should result in a denser cell as compared to the standard polyfuse or antifuse OTPs. The results obtained on these integrated capacitors show good overall electrical performance with breakdown voltage adjustable under 5 V and large sense current margins (about 6 decades). The dispersion, even if quite large in this initial study, proved to be manageable since the capacitor's acceleration factors are high.\",\"PeriodicalId\":103959,\"journal\":{\"name\":\"ESSDERC 2007 - 37th European Solid State Device Research Conference\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC 2007 - 37th European Solid State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2007.4430920\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC 2007 - 37th European Solid State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2007.4430920","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
W/Ta2O5/TaN MIM capacitor for high density one time programmable memory
In this paper, we report a study on an alternative one time programmable (OTP) memory cell consisting in an access MOSFET and a capacitor integrated between the contact plug and the first metal line level. Such an OTP should result in a denser cell as compared to the standard polyfuse or antifuse OTPs. The results obtained on these integrated capacitors show good overall electrical performance with breakdown voltage adjustable under 5 V and large sense current margins (about 6 decades). The dispersion, even if quite large in this initial study, proved to be manageable since the capacitor's acceleration factors are high.
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