晶体振荡器“昏睡病”的随机模型

Y. Shmaliy, R. Brendel
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引用次数: 0

摘要

讨论了在低驱动电平下晶体振荡器的随机模型,其中晶体谐振器表现出称为“昏睡病”的效应。在模型中,谐振腔损耗假定为非线性,R1(Ir) = R10(1 + gamma /Ir n),其中Ir为压电电流的峰值幅度,gamma为驱动电平依赖(DLD)系数,n为非线性程度。我们表明,当长时间存储后反馈不足时,具有昏睡病的非线性晶体谐振器在振荡器中不会陷入“绝对睡眠”状态。而是在噪声水平上产生由噪声引起的振荡
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Stochastic Model of "Sleeping Sickness" of Crystal Oscillators
A stochastic model of a crystal oscillator is discussed at low drive levels, where a crystal resonator exhibits the effect termed "sleeping sickness". In the model, resonator losses are supposed to be nonlinear, R1(Ir) = R10(1 + gammaR/Ir n), where Ir is a peak amplitude of the piezoelectric current, gammaR is a drive level dependence (DLD) coefficient, and n is a degree of nonlinearity. We show that a nonlinear crystal resonator with sleeping sickness does not fall to an "absolute sleep" in the oscillator, when a feedback becomes insufficient after a long storage. It rather generates the noise-induced oscillations at the noise level
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