{"title":"用于60 GHz应用的高增益片上半球形介电谐振器天线","authors":"Meshari D. Alanazi, S. Khamas","doi":"10.1109/iWAT48004.2020.1570617936","DOIUrl":null,"url":null,"abstract":"This paper explores how varying the structure of an on-chip 60 GHz dielectric resonator antenna (DRA) affects radiation characteristics such as gain, bandwidth and efficiency. Three configurations have been considered a standalone antenna, antenna with a single dielectric superstrate, and antenna with a dielectric superstrate as well as a parasitic substrate. A considerably high broadside gain of 12.4 dBi been achieved when the superstrate and parasitic substrate (SPS) are utilized. This has been achieved in conjunction with a 7.2% impedance bandwidth and a radiation efficiency of 81.6 %. All optimizations have been done using CST and cross-validated using HFSS.","PeriodicalId":230714,"journal":{"name":"2020 International Workshop on Antenna Technology (iWAT)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High Gain On-Chip Hemispherical Dielectric Resonator Antenna for 60 GHz Applications\",\"authors\":\"Meshari D. Alanazi, S. Khamas\",\"doi\":\"10.1109/iWAT48004.2020.1570617936\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper explores how varying the structure of an on-chip 60 GHz dielectric resonator antenna (DRA) affects radiation characteristics such as gain, bandwidth and efficiency. Three configurations have been considered a standalone antenna, antenna with a single dielectric superstrate, and antenna with a dielectric superstrate as well as a parasitic substrate. A considerably high broadside gain of 12.4 dBi been achieved when the superstrate and parasitic substrate (SPS) are utilized. This has been achieved in conjunction with a 7.2% impedance bandwidth and a radiation efficiency of 81.6 %. All optimizations have been done using CST and cross-validated using HFSS.\",\"PeriodicalId\":230714,\"journal\":{\"name\":\"2020 International Workshop on Antenna Technology (iWAT)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Workshop on Antenna Technology (iWAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/iWAT48004.2020.1570617936\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Workshop on Antenna Technology (iWAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iWAT48004.2020.1570617936","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Gain On-Chip Hemispherical Dielectric Resonator Antenna for 60 GHz Applications
This paper explores how varying the structure of an on-chip 60 GHz dielectric resonator antenna (DRA) affects radiation characteristics such as gain, bandwidth and efficiency. Three configurations have been considered a standalone antenna, antenna with a single dielectric superstrate, and antenna with a dielectric superstrate as well as a parasitic substrate. A considerably high broadside gain of 12.4 dBi been achieved when the superstrate and parasitic substrate (SPS) are utilized. This has been achieved in conjunction with a 7.2% impedance bandwidth and a radiation efficiency of 81.6 %. All optimizations have been done using CST and cross-validated using HFSS.