基于片上特性的电源传输阻抗预测电磁干扰峰值频率

Y. Hatogai, H. Sasaki, T. Sudo
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引用次数: 0

摘要

电磁干扰预测是现代电子系统中的一个关键问题。传统的电磁干扰预测方法包括单板本身的谐振频率和S参数。然而,由于片上电容对谐振频率的影响很大,因此准确估计EMI的最坏峰值频率是不够的。因此,需要改进EMI预测,包括片上配电网络(PDN)和封装PDN。本文对整个系统的传递阻抗进行了精确分析。结果表明,整个系统的传递阻抗峰值频率与测量到的电磁干扰峰值频率具有较好的相关性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
EMI peak frequency forecast by power supply transfer impedance with on-chip property
Electromagnetic interference (EMI) forecast is a critical issue in the modern electronic systems. The conventional method of EMI forecast includes the resonance frequency and S parameter of single board itself. However, it was not enough to estimate the worst peak frequency of EMI accurately, because on-chip capacitance affects greatly on the resonance frequency. Therefore, the EMI forecast is required to be improved by including on-chip power distribution network (PDN) and package PDN too. In this paper, transfer impedance of the entire system was precisely analyzed. As a result, it was confirmed that the peak frequency of transfer impedance of total system showed better correlation with the measured peak frequency of EMI.
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