在1.3 μm硅上生长InAs/Sb:GaAs量子点

2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI:10.1109/INOW.2008.4634487

M. Rajesh, Lin Li, D. Guimard, Y. Arakawa

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引用次数: 0

摘要

本文报道了用金属有机化学气相沉积(MOCVD)在硅(Si)衬底上生长自组织InAs/Sb:GaAs量子点(QDs)。得到了沿[0-11]方向排列的高密度量子点。这些量子点在室温下表现出1.3 μ m的基态发射。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Growth of InAs/Sb:GaAs quantum dots on silicon emitting at 1.3 μm

We report the growth of self-organized InAs/Sb:GaAs quantum dots (QDs) on silicon (Si) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). High density QDs aligned along [0-11] direction was obtained. These QDs exhibit ground state emission at 1.3 mum at room temperature (RT).

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2008 International Nano-Optoelectronics Workshop

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