用于驱动分布式调制器驱动器的交叉点控制的12.8 gb /s InP HBT限幅放大器的设计

The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings. Pub Date : 2004-12-06 DOI:10.1109/APCCAS.2004.1412706

D. Chiang, B. Oyama

{"title":"用于驱动分布式调制器驱动器的交叉点控制的12.8 gb /s InP HBT限幅放大器的设计","authors":"D. Chiang, B. Oyama","doi":"10.1109/APCCAS.2004.1412706","DOIUrl":null,"url":null,"abstract":"A 12.8-Gb/s InP HBT limiting amplifier for driving a distributed modulator driver has been designed. The limiting amplifier has cross-point and gain-control features. The key block of the amplifier is a cascode emitter-coupled pair with Schottky diode output clamps to achieve the limiting function. The cross-point feature is realized by generating a DC offset current for the emitter-coupled pair. The limiting amplifier was fabricated in a 1.5-/spl mu/m InP HBT process. The measured cross-point control range and rise/fall time are 33% to 83%, 15.8ps/10.4ps respectively.","PeriodicalId":426683,"journal":{"name":"The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of a 12.8-Gb/s InP HBT limiting amplifier with cross-point control for driving a distributed modulator driver\",\"authors\":\"D. Chiang, B. Oyama\",\"doi\":\"10.1109/APCCAS.2004.1412706\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 12.8-Gb/s InP HBT limiting amplifier for driving a distributed modulator driver has been designed. The limiting amplifier has cross-point and gain-control features. The key block of the amplifier is a cascode emitter-coupled pair with Schottky diode output clamps to achieve the limiting function. The cross-point feature is realized by generating a DC offset current for the emitter-coupled pair. The limiting amplifier was fabricated in a 1.5-/spl mu/m InP HBT process. The measured cross-point control range and rise/fall time are 33% to 83%, 15.8ps/10.4ps respectively.\",\"PeriodicalId\":426683,\"journal\":{\"name\":\"The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings.\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APCCAS.2004.1412706\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS.2004.1412706","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

设计了一种用于驱动分布式调制器驱动器的12.8 gb /s InP HBT限幅放大器。该限幅放大器具有交叉点和增益控制特性。放大器的关键模块是带肖特基二极管输出箝位的级联码发射器耦合对，以实现限制功能。交叉点特性是通过对发射器耦合对产生直流偏置电流来实现的。限位放大器采用1.5-/spl μ m InP HBT工艺制作。测量到的交叉点控制范围和上升/下降时间分别为33% ~ 83%，15.8ps/10.4ps。

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Design of a 12.8-Gb/s InP HBT limiting amplifier with cross-point control for driving a distributed modulator driver

A 12.8-Gb/s InP HBT limiting amplifier for driving a distributed modulator driver has been designed. The limiting amplifier has cross-point and gain-control features. The key block of the amplifier is a cascode emitter-coupled pair with Schottky diode output clamps to achieve the limiting function. The cross-point feature is realized by generating a DC offset current for the emitter-coupled pair. The limiting amplifier was fabricated in a 1.5-/spl mu/m InP HBT process. The measured cross-point control range and rise/fall time are 33% to 83%, 15.8ps/10.4ps respectively.

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The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings.

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