红外宽频源1000nm ~ 1700nm,基于掺铒、钕、铋双包层光纤

ALT Proceedings Pub Date : 2012-11-01 DOI:10.12684/ALT.1.73
S. Pilz, D. Etissa, C. Barbosa, V. Romano
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引用次数: 1

摘要

采用干粒状氧化物技术制备了具有宽红外发射特性的掺Nd3+、Er3+和Bi3+双包层光纤(芯径25.5μm,包层直径125μm),并对其进行了研究。在800nm连续波泵浦源激发下,三种掺杂材料均在目标红外区(1000-1700nm)显示荧光。所观察到的发射荧光功率为659μW。将泵浦波长改变为976nm,只产生Er3+和Bi3+的荧光,并且Bi3+的发射峰展宽。当泵浦波长为976nm时,测量到的最大荧光输出功率为1.42mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Infrared broadband source from 1000nm to 1700nm, based on an Erbium, Neodymium and Bismuth doped double-clad fiber
A Nd3+, Er3+ and Bi3+ doped double-clad fiber (core diameter of 25.5μm, cladding diameter of 125μm) with a broad infrared emission has been fabricated based on technique of dry granulated oxides and investigated. Upon the excitation with a 800nm cw pump source all of the three dopant materials showed fluorescence in the infrared region of interest (1000-1700nm). The observed emitted fluorescence power was measured to be 659μW. Changing the pump wavelength to 976nm led to a fluorescence of only Er3+ and Bi3+ and a broadening of the Bi3+ emission peak. The maximal measured fluorescence output power was 1.42mW, when pumped at 976nm.
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