在空间应用中实现低轮廓宽频率牵引的VCXO方法

Anjali N, Chandrashekar Mariyappa, D. M
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引用次数: 0

摘要

频率牵引是压控晶体振荡器(VCXO)的关键参数之一,由于石英晶体运动参数和振荡器电路拓扑结构的局限性,在石英晶体振荡器中实现很高的频率牵引一直是一个挑战。本文介绍了电路拓扑结构、晶体参数、关键电子元件的选择和VCXO封装,以实现所需的低姿态封装。通过设计优化,在0V至5V的控制电压范围内实现了最小±375 ppm的拉力。此外,还将讨论vcxo在-30°C至60°C的整个工作温度范围内的性能。利用仿真工具进行参数优化,以达到所要求的规格。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
VCXO Methodology to Achieve wide Frequency Pulling in Low Profile for Space Applications
Frequency Pulling is one of the critical parameters of Voltage-controlled Crystal oscillators (VCXO), it is always a challenge to achieve very high pulling in quartz crystal oscillators due to its self-limitation of quartz crystal motional parameters and oscillator circuit topology. This paper describes the selection of circuit topology, crystal parameters, critical electronic components, and VCXO packaging to achieve the required pulling in a low-profile package. Pulling of min ±375 ppm has been achieved over a control voltage range of 0V to 5V with the design optimization. In addition, the performance of VCXOs over the complete operating temperature range of -30°C to 60°C will be discussed. Simulation tools were used for parameter optimization to achieve the required specification.
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