H. Zhang, W. Yin, D. Pan, X. Jin, G. G. Zhang, S. G. Min
{"title":"PVK-ZnO(RhB)体系的光电导率","authors":"H. Zhang, W. Yin, D. Pan, X. Jin, G. G. Zhang, S. G. Min","doi":"10.1109/CEIDP.1986.7726435","DOIUrl":null,"url":null,"abstract":"ZnO-resin photoreceptor has become more important in recent years with increased demand for plain paper copy and xerography. The photocarrier in this system mainly consists of electrons, hole being usually immobile which results in space charge accumulation, with the increase of residual potential and decrease of life. It is suggested that such effects could be reduced in ambipolar materials where the simultaneous derealization of both electrons and holes leads to the elimination of space charges. As we know, ZnO is n-type photoconductor, and PVK is of p-type. Besides, it was demonstrated that the surface states of micro-crystalline ZnO can strongly interact with the matrix polymer of PVK, indicating the possibility of lowering the surface barrier of ZnO and promotion of hole generation in PVK. Therefore, we choose PVK_ZnO(RhB) system as an object of study.","PeriodicalId":354533,"journal":{"name":"Conference on Electrical Insulation & Dielectric Phenomena — Annual Report 1986","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoconductivity of PVK-ZnO(RhB) system\",\"authors\":\"H. Zhang, W. Yin, D. Pan, X. Jin, G. G. Zhang, S. G. Min\",\"doi\":\"10.1109/CEIDP.1986.7726435\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ZnO-resin photoreceptor has become more important in recent years with increased demand for plain paper copy and xerography. The photocarrier in this system mainly consists of electrons, hole being usually immobile which results in space charge accumulation, with the increase of residual potential and decrease of life. It is suggested that such effects could be reduced in ambipolar materials where the simultaneous derealization of both electrons and holes leads to the elimination of space charges. As we know, ZnO is n-type photoconductor, and PVK is of p-type. Besides, it was demonstrated that the surface states of micro-crystalline ZnO can strongly interact with the matrix polymer of PVK, indicating the possibility of lowering the surface barrier of ZnO and promotion of hole generation in PVK. Therefore, we choose PVK_ZnO(RhB) system as an object of study.\",\"PeriodicalId\":354533,\"journal\":{\"name\":\"Conference on Electrical Insulation & Dielectric Phenomena — Annual Report 1986\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference on Electrical Insulation & Dielectric Phenomena — Annual Report 1986\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CEIDP.1986.7726435\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference on Electrical Insulation & Dielectric Phenomena — Annual Report 1986","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEIDP.1986.7726435","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
ZnO-resin photoreceptor has become more important in recent years with increased demand for plain paper copy and xerography. The photocarrier in this system mainly consists of electrons, hole being usually immobile which results in space charge accumulation, with the increase of residual potential and decrease of life. It is suggested that such effects could be reduced in ambipolar materials where the simultaneous derealization of both electrons and holes leads to the elimination of space charges. As we know, ZnO is n-type photoconductor, and PVK is of p-type. Besides, it was demonstrated that the surface states of micro-crystalline ZnO can strongly interact with the matrix polymer of PVK, indicating the possibility of lowering the surface barrier of ZnO and promotion of hole generation in PVK. Therefore, we choose PVK_ZnO(RhB) system as an object of study.