基于NMOS晶体管的均匀分布RC滤波器

S. Wachirarattanapornkul
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引用次数: 0

摘要

本文提出了一种基于NMOS纯晶体管电路的无源均匀分布RC(以下简称URC)器件,该器件具有与URC相似的低相移特性和高频支持。该电路的优点是通过电压控制(VC)可以改变URC的电阻-电容(RC)或时间常数(RC)。它比普通的无源URC更适合于选择性频率截止,不能调节。此外,该电路仅使用单个电压源,工作电压仅为2.5 V,从而降低了功耗。采用PSPICE仿真程序对TSMC 0.25 um CMOS工艺进行仿真,并与无源块体URC进行比较,验证了研究结果。仿真结果表明,将所提出的电路做成低通滤波器和高通滤波器,分别可以在40 kHz ~ 1.6 GHz和180 kHz ~ 350 MHz的频率范围内选择截止频率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Uniformly Distributed RC Filters Based-on NMOS Transistor-Only
This paper presents the construction of a passive uniformly distributed RC (hereafter as URC) device based-on NMOS transistor-only circuits with low phase shift characteristics and high-frequency support similar to the URC. The advantage of the proposed circuit has the variable the resistance-capacitance (RC) or time-constant () of the URC by the voltage control (VC). It to be used in selective-frequency cut-off on better than the normal passive URC, which can't be adjusted. In addition, the proposed circuit uses only a single voltage source to operate at only 2.5 V, resulting in low power consumption. The simulate by PSPICE simulation program was used on TSMC 0.25 um CMOS Technology compared with the passive lump URC to confirm the research results. And simulation results when made the proposed circuit into the low-pass filter and the high-pass filter circuit can be selective-frequency cut-off ranges at 40 kHz - 1.6 GHz and 180 kHz - 350 MHz by respective.
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