微纳米通道中电渗透流动的晶格玻尔兹曼模拟

F. Tian, Baoming Li, D. Kwok
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引用次数: 18

摘要

基于泊松-玻尔兹曼电荷分布方程,提出了一种晶格玻尔兹曼模型(LBM),用于模拟直矩形微纳米通道中的电渗透传输。利用LBM研究了通道高度、电解质浓度、表面电位、双电层厚度和外加电场对50 ~ 800 nm通道速度分布的影响。我们的结果与相应的解析解非常吻合,晶格玻尔兹曼模型可以用来模拟外源电场存在下微通道中的电动力学输运现象。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Lattice Boltzmann Simulation of Electroosmotic Flows in Micro- and Nanochannels
A Lattice Boltzmann Model (LBM) with the Poisson-Boltzmann equation for charge distribution is presented for the simulation of electroosmotic transport in straight rectangular micro- and nanochannels. Effects of the channel height, electrolyte concentration, surface potential, electric double layer thickness and externally applied electric field on the velocity profile of 50 to 800 nm channels were studied by means of a LBM. Our results are in excellent agreement with the corresponding analytical solution and the Lattice Boltzmann Model can be used to simulate electrokinetic transport phenomena in microchannels in the presence of an externally applied electric field.
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