一种利用缺陷接地结构抑制谐波并提高输出功率的压控振荡器

Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678) Pub Date : 2003-11-17 DOI:10.1109/IMOC.2003.1244851

Haiwen Liu, Xiaowei Sun, Zhengfan Li

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引用次数: 7

摘要

本文提出了一种新型的缺陷接地结构(DGS)，用于抑制微波电路中压控振荡器(VCO)的谐波并提高其输出功率。DGS是由两个具有不同中心频率(以2:3的比例)的阻带周期结构并联而成，并在某些频带内提供带隙特性。仿真和实验结果表明，采用DGS的微带线具有较宽的基频低通带和二次谐波阻带，性能良好。为了评估DGS对微波压控振荡器的影响，设计并制作了两个GaAs场效应晶体管(FET)压控振荡器。其中一个有一个50/spl ω /微带线与DGS在输出部分，而另一个只有50/spl ω /直线。测量结果表明，DGS在输出端抑制了大于-20dBm的二次谐波，输出功率提高了3-5%。

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A VCO with harmonic suppressed and output power improved using defected ground structure

In this paper, a novel defected ground structure (DGS) is proposed for suppressing harmonic and increasing the output power of a voltage-controlled oscillator (VCO) in microwave circuits. The DGS is formed with connecting in parallel two periodic structures which have different center frequencies (in a ratio of 2:3) of the stopband and provides the bandgap characteristic in certain frequency bands. Simulated and experimental results show that the microstrip line with DGS has a wide low-pass band for the fundamental frequency and a stopband for the second harmonic with good performance. To evaluate the effects of DGS on microwave VCOs, two GaAs field-effect transistor (FET) VCOs have been designed and fabricated. One of them has a 50/spl Omega/ microstrip line with DGS at the output section, while the other has only 50/spl Omega/ straight line. Measured results show that DGS suppresses the second harmonic more than -20dBm at the output and yields improved output power by 3-5%.

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Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678)

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