一种由大型光电二极管驱动的CMOS TIAs的带宽增强技术

M. H. Taghavi, L. Belostotski, J. Haslett
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引用次数: 7

摘要

介绍了一种提高大型光电二极管驱动的传统串峰跨阻放大器(TIA)带宽的新方法。结果表明,通过并行使用N个相同的tia,可以显著提高电路带宽。该技术的优势在于,即使光电二极管电容很大,也能在多ghz频率范围内提供大带宽增强,而不会显著增加TIA核心电路的面积。该技术在0.13μm标准CMOS技术上进行了仿真设计。仿真结果表明,3dB带宽为26GHz,光电二极管电容为0.5pF,跨阻增益为51dBΩ,群延迟为33.5±4ps。该技术的总体带宽增强比为3.25,增益纹波小于0.1dB,比以前报道的大光电二极管电容的带宽增强更高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A bandwidth enhancement technique for CMOS TIAs driven by large photodiodes
A new method of enhancing the bandwidth of a conventional series-peaked transimpedance amplifier (TIA) driven by a large photodiode is introduced. It is shown that by using N identical TIAs in parallel the circuit bandwidth can be significantly improved. The advantage of the proposed technique is in its ability to provide large bandwidth enhancements in multi-GHz frequency ranges even when photodiode capacitance is large, without a noticeable increase in TIA core circuit area. This technique is supported by a design example simulated in a 0.13μm standard CMOS technology. Simulation results show a 3dB bandwidth of 26GHz with 0.5pF photodiode capacitance, a transimpedance gain of 51dBΩ and group delay of 33.5±4ps. The proposed technique shows an overall bandwidth enhancement ratio of 3.25 with less than 0.1dB gain ripple resulting in higher bandwidth enhancement than previously reported for large photodiode capacitances.
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