R. Caluwaerts, M. Van Hove, G. Beyer, R. Hoofman, H. Struyf, G. Verheyden, J. Waeterloos, Z. Tokei, F. Iacopi, L. Carbonell, Q. Le, A. Das, I. Vos, S. Demuynck, K. Maex
{"title":"后成型细观孔隙形成:一种潜在的孔隙密封解决方案","authors":"R. Caluwaerts, M. Van Hove, G. Beyer, R. Hoofman, H. Struyf, G. Verheyden, J. Waeterloos, Z. Tokei, F. Iacopi, L. Carbonell, Q. Le, A. Das, I. Vos, S. Demuynck, K. Maex","doi":"10.1109/IITC.2003.1219765","DOIUrl":null,"url":null,"abstract":"The creation of meso porosity in single damascene structures after patterning has been investigated to facilitate the sealing of the sidewalls by iPVD barriers. The dielectric stack consists of developmental porous SILK (v7) resin (SiLK is a trademark of The Dow Chemical Company) and a chemical vapor deposited hard mask. Porous SILK (v7) resin was selected since the temperature of vitrification of the material is lower than the temperature of porogen burn out. Creation of meso porosity after patterning results in smooth trench sidewalls, leading to an improved iPVD barrier integrity, as opposed to the conventional process sequence, which gives rise to large, exposed pores at the sidewall.","PeriodicalId":212619,"journal":{"name":"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)","volume":"169 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Post patterning meso porosity creation: a potential solution for pore sealing\",\"authors\":\"R. Caluwaerts, M. Van Hove, G. Beyer, R. Hoofman, H. Struyf, G. Verheyden, J. Waeterloos, Z. Tokei, F. Iacopi, L. Carbonell, Q. Le, A. Das, I. Vos, S. Demuynck, K. Maex\",\"doi\":\"10.1109/IITC.2003.1219765\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The creation of meso porosity in single damascene structures after patterning has been investigated to facilitate the sealing of the sidewalls by iPVD barriers. The dielectric stack consists of developmental porous SILK (v7) resin (SiLK is a trademark of The Dow Chemical Company) and a chemical vapor deposited hard mask. Porous SILK (v7) resin was selected since the temperature of vitrification of the material is lower than the temperature of porogen burn out. Creation of meso porosity after patterning results in smooth trench sidewalls, leading to an improved iPVD barrier integrity, as opposed to the conventional process sequence, which gives rise to large, exposed pores at the sidewall.\",\"PeriodicalId\":212619,\"journal\":{\"name\":\"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)\",\"volume\":\"169 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2003.1219765\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2003.1219765","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Post patterning meso porosity creation: a potential solution for pore sealing
The creation of meso porosity in single damascene structures after patterning has been investigated to facilitate the sealing of the sidewalls by iPVD barriers. The dielectric stack consists of developmental porous SILK (v7) resin (SiLK is a trademark of The Dow Chemical Company) and a chemical vapor deposited hard mask. Porous SILK (v7) resin was selected since the temperature of vitrification of the material is lower than the temperature of porogen burn out. Creation of meso porosity after patterning results in smooth trench sidewalls, leading to an improved iPVD barrier integrity, as opposed to the conventional process sequence, which gives rise to large, exposed pores at the sidewall.
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