等离子体MMI开关在10gb /s真实数据流量条件下的首次实验演示

2012 38th European Conference and Exhibition on Optical Communications Pub Date : 2012-09-16 DOI:10.1364/ECEOC.2012.TH.1.E.3

D. Kalavrouziotis, S. Papaioannou, K. Vyrsokinos, L. Markey, A. Dereux, G. Giannoulis, D. Apostolopoulos, H. Avramopoulos, N. Pleros

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引用次数: 0

摘要

我们报道了一个75um长的等离子体MMI开关的首次实验性能评估，该开关在SOI平台上异质集成，以10Gb/s的数据信号工作。当开关功率为35mW时，该开关的响应时间为2.9μs，调制深度为44.5%，消光比为5.4 ~ -1.5 dB。实现了无错误性能。

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First experimental demonstration of a plasmonic MMI switch in 10 Gb/s true data traffic conditions

We report the first experimental performance evaluation of a 75 um long plasmonic MMI switch, hetero-integrated on a SOI platform, operating with 10Gb/s data signals. The switch exhibits 2.9μs response time and 44.5% modulation depth while its extinction ratio varies from 5.4 to -1.5 dB for 35mW switching power. Error-free performance was achieved.

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2012 38th European Conference and Exhibition on Optical Communications

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