利用空间分辨光致发光作图的III-V型微波功率晶体管温度分布

J. Landesman, D. Floriot, E. Martín, R. Bisaro, S. Delage, P. Braun
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引用次数: 3

摘要

本文介绍了一种用于微波应用的高功率III-V型半导体晶体管有源区域局部温度映射的新方法。测量技术包括在封装内的芯片表面扫描聚焦激光束,同时在激光束的每个位置依次记录产生的光致发光(PL)光谱。局部温度由PL峰相应的波长位移推导出来,它代表了由于加热引起的带隙变化。结果显示了场效应型晶体管(GaAs/Ga/sub 1-x/Al/sub x/As/Ga/sub 1-y/In/sub y/As系统中的伪晶高电子迁移率晶体管phemts)和双极型晶体管(GaAs/Ga/sub 1-x/In/sub x/P系统中的异质结双极晶体管hbts)。空间分辨率为1/spl mu/m,温度测定精度为/spl plusmn/1/spl度/C,特别是phemt。最后,提出了将该方法提供的局部工作温度信息应用于热阻计算的程序。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature distributions in III-V microwave power transistors using spatially resolved photoluminescence mapping
This paper describes a new method for the mapping of local temperatures in the active region of high power III-V semiconductor transistors for microwave applications. The measurement technique involves scanning a focused laser beam at the surface of a chip inside its package, while the photoluminescence (PL) spectra produced are recorded sequentially for each position of the laser beam. The local temperature is deduced from the corresponding wavelength shift of the PL peak, which represents changes in the band-gap due to heating. Results are shown both for field effect type transistors (pseudomorphic high electron mobility transistors-PHEMTs-in the GaAs/Ga/sub 1-x/Al/sub x/As/Ga/sub 1-y/In/sub y/As system) and for bipolar type transistors (heterojunction bipolar transistors-HBTs-in the GaAs/Ga/sub 1-x/In/sub x/P system). A spatial resolution of 1 /spl mu/m and an accuracy in the temperature determination of /spl plusmn/1/spl deg/C are demonstrated, especially for the PHEMTs. Finally, procedures are proposed to implement the information on local operating temperatures provided by this method into thermal resistance calculations.
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