{"title":"BiCMOS工艺步骤对薄栅氧化物质量的影响","authors":"S. Whiston, B. Stakelum, M. O’Neill, W. Lane","doi":"10.1109/RELPHY.1994.307830","DOIUrl":null,"url":null,"abstract":"This paper reports on the work carried out on the improvement of gate oxide quality on a 1.0 /spl mu/m BICMOS process. The gate oxide defectivity was improved by partitioning the process into key process blocks and examining the contribution of each block to the overall defect level. Case studies from each block are presented which describe the weaknesses identified and the solutions implemented which have resulted in a robust and manufacturable process. A short loop process monitor is also described.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Influence of BiCMOS processing steps on thin gate oxide quality\",\"authors\":\"S. Whiston, B. Stakelum, M. O’Neill, W. Lane\",\"doi\":\"10.1109/RELPHY.1994.307830\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on the work carried out on the improvement of gate oxide quality on a 1.0 /spl mu/m BICMOS process. The gate oxide defectivity was improved by partitioning the process into key process blocks and examining the contribution of each block to the overall defect level. Case studies from each block are presented which describe the weaknesses identified and the solutions implemented which have resulted in a robust and manufacturable process. A short loop process monitor is also described.<<ETX>>\",\"PeriodicalId\":276224,\"journal\":{\"name\":\"Proceedings of 1994 IEEE International Reliability Physics Symposium\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1994.307830\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1994.307830","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of BiCMOS processing steps on thin gate oxide quality
This paper reports on the work carried out on the improvement of gate oxide quality on a 1.0 /spl mu/m BICMOS process. The gate oxide defectivity was improved by partitioning the process into key process blocks and examining the contribution of each block to the overall defect level. Case studies from each block are presented which describe the weaknesses identified and the solutions implemented which have resulted in a robust and manufacturable process. A short loop process monitor is also described.<>
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