大面积大功率VCSEL

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882289

M. Miller, M. Grabherr, R. Jager, H. Unold, K. Ebeling

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引用次数: 2

摘要

我们制作了波长为990 nm的大功率底发射VCSELs，其最大输出功率达到了创纪录的0.89 W。良好的光束特性，如圆对称近场模式和低发散远场加上高功率密度超过1.1 kW/cm/sup 2/允许多模光纤耦合功率超过0.5 W。采用外反射器进行高阶横模滤波可以进一步提高光束质量。

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Large-area high-power VCSEL

We have fabricated high-power bottom-emitting VCSELs for a wavelength of 990 nm with a record high maximum output power of 0.89 W. Favorable beam characteristics such as a circularly symmetric near-field pattern and low divergence far-field together with high power density of more than 1.1 kW/cm/sup 2/ allow for multimode fiber coupled power of more than 0.5 W. Further improved beam quality can be obtained applying an external reflector for higher order transverse mode filtering.

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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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