脉冲平板x射线源门控ZnO纳米线场发射阵列的制备

2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI:10.1109/IVNC49440.2020.9203370

Chengyun Wang, Long Zhao, Libin Wang, Xinpeng Bai, S. Deng, JuncongShe, N. Xu, Jun Chen

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引用次数: 0

摘要

本文制备了一种用于脉冲平板x射线源的门控ZnO纳米线场发射极阵列(FEAs)。采用热氧化法生长ZnO纳米线，并通过调整氧化气氛来优化ZnO纳米线在器件结构中的生长。研究了FEAs的脉冲响应，并检测了相应的x射线发射。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication of Gated ZnO Nanowire Field Emitter Arrays for Pulsed Flat Panel X-ray Source

In this study, a gated ZnO nanowire field emitter arrays (FEAs) was fabricated for the application of pulsed flat panel X-ray source. The ZnO nanowires were grown using thermal oxidation method and the growth ZnO nanowires in the device structure was optimized by adjusting the oxidation atmosphere. The pulsed response of the FEAs was studied and corresponding X-ray emission was detected.

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2020 33rd International Vacuum Nanoelectronics Conference (IVNC)

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