SiGe-on-SOI Mach-Zehnder调制器，易于边缘耦合

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI:10.1109/PHOSST.2016.7548797

X. Sun, F. Li, Z. Shao, Wanping Guo, Yizhong Huang, Fei Liu, Linghui Jia, Ning-Ning Feng, Juejun Hu

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引用次数: 1

摘要

提出了一种SiGe-on-SOI载流子耗尽马赫-曾德尔调制器。与硅调制器相比，它支持双波导设计，使用小SiGe波导作为调制器，大Si波导用于边缘耦合，从而消除了反锥的先进光刻技术。包括直流和高速试验结果。

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A SiGe-on-SOI Mach-Zehnder modulator enabling easy edge coupling

A SiGe-on-SOI carrier-depletion Mach-Zehnder modulator is presented. Compared with Si modulators, it enables a dual-waveguide design using small SiGe waveguides for modulators and large Si waveguides for edge coupling thus eliminates advanced lithography for inverse tapers. DC and high speed test results are included.

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2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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