功率放大器mmic用于15 GHz微波链路在0.25 m GaN技术

2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-01 DOI:10.1109/INMMIC.2017.7927311

V. Camarchia, R. Quaglia, C. Ramella, M. Pirola

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引用次数: 6

摘要

本文介绍了三种采用GaN 0.25 μm技术设计的15ghz微波无线电应用功率放大器。第一个设计为3W组合功率放大器，第二个设计为7-15 GHz双频3W组合功率放大器，第三个设计为4W多尔蒂功率放大器。讨论了GaN 0.25 μm技术应用于该特定应用的三种不同设计方案的优点和局限性，并介绍和比较了在所开发放大器上获得的测量结果。

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Power amplifier MMICs for 15 GHz microwave links in 0.25 üm GaN technology

This paper presents three power amplifiers designed for 15 GHz microwave radio application employing GaN 0.25 μm technology. The first design is a 3W combined power amplifier, the second is a 7–15 GHz dual-band 3 W combined power amplifier, and the third is a 4W Doherty power amplifier. Advantages and limitations of GaN 0.25 μm technology applied to the three different design solutions for this specific application are discussed, presenting and comparing the measurement results obtained on the developed amplifiers.

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2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)

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