太赫兹波段可重构的相变材料

V. Sanphuang, N. Ghalichechian, N. Nahar, J. Volakis
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引用次数: 1

摘要

我们提出相变材料(PCMs)来证明太赫兹滤波器的可重构性。本文研究了二氧化钒(VO2),因为它在70°C的温度下表现出绝缘体到金属的转变特性。为了提高太赫兹传感器件的选择性,设计了一种使用频率选择表面(FSS)与VO2集成的宽带开/关滤波器。仿真和测量结果表明,在0.1 ~ 1太赫兹的频率范围内,两者具有很好的一致性。在70°C以下,传输以0.55 THz为中心,在70°C以上加热时,传输被切断。因此,滤波器的开/关开关是通过使用VO2来实现的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Phase-change material for reconfigurability in THz band
We propose phase-change materials (PCMs) to demonstrate the reconfigurablility of THz filter. Here vanadium dioxide (VO2) is studied since it shows insulator-to-metal transition properties at temperature of 70 °C. A broadband ON/OFF filter using frequency selective surfaces (FSS) integrated with VO2 is designed to improve selectivity of THz sensing devices. Simulation and measurement results show an excellent agreement in frequency range of 0.1 - 1 THz. Transmission is centered around 0.55 THz below 70 °C and is cut off when the filter is heated above 70 °C. Therefore, ON/OFF switching in filters is achieved by employing VO2.
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