{"title":"采用金属氧化物半导体电容器的有源硅微环谐振器","authors":"Chao Li, A. Poon","doi":"10.1109/GROUP4.2004.1416639","DOIUrl":null,"url":null,"abstract":"We propose an injection-type active silicon microring resonator using metal-oxide-semiconductor capacitors. Our simulations reveal a modulation bandwidth exceeding 2 GHz, a resonance shift of 0.5 nm, and an extinction ratio exceeding 20 dB.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"127 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Active silicon microring resonators using metal-oxide-semiconductor capacitors\",\"authors\":\"Chao Li, A. Poon\",\"doi\":\"10.1109/GROUP4.2004.1416639\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose an injection-type active silicon microring resonator using metal-oxide-semiconductor capacitors. Our simulations reveal a modulation bandwidth exceeding 2 GHz, a resonance shift of 0.5 nm, and an extinction ratio exceeding 20 dB.\",\"PeriodicalId\":299690,\"journal\":{\"name\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"volume\":\"127 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2004.1416639\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416639","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Active silicon microring resonators using metal-oxide-semiconductor capacitors
We propose an injection-type active silicon microring resonator using metal-oxide-semiconductor capacitors. Our simulations reveal a modulation bandwidth exceeding 2 GHz, a resonance shift of 0.5 nm, and an extinction ratio exceeding 20 dB.
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