用于湿度传感的铟锌氧化物双层电薄膜晶体管

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) Pub Date : 2018-11-01 DOI:10.1109/CAD-TFT.2018.8608110

Yongli He, Ya Gao, Zehua Liu, Jie Luo, Chenxi Zhang, Qing Wan

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引用次数: 2

摘要

采用琼脂电解质介质在ITO玻璃衬底上制备了铟锌氧化物双电层薄膜晶体管(EDL)。测试了与湿度相关的器件性能，如琼脂电解质的比电容、转移特性和栅极泄漏电流。EDL tft的湿度依赖特性表明其在湿度传感方面具有潜在的应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Indium-Zinc-Oxide Electric-Double-Layer Thin-Film Transistors for Humidity Sensing

Indium-zinc-oxide electric-double-layer (EDL) thin-film-transistors (TFTs) were fabricated on ITO glass substrates gated by agar electrolyte dielectrics. The humidity-dependent device performance was tested such as specific capacitance of the agar electrolyte, transfer characteristics, and gate leakage current. The humidity-dependent characteristics indicate that the EDL TFTs have potential applications in humidity sensing.

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来源期刊

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)

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